Magnetic media having improved magnetic grain size distribution and intergranular segregation

ABSTRACT

A method and system provide a magnetic recording media usable in a magnetic storage device. The magnetic recording media includes a substrate, at least one intermediate layer and a magnetic recording stack for storing magnetic data. The intermediate layer(s) include a majority phase having a first diffusion constant and a secondary phase having a second diffusion constant greater than the first diffusion constant. The magnetic recording stack residing on the intermediate layer such that the at least one intermediate layer is between the substrate and the magnetic recording stack.

BACKGROUND

Conventional magnetic recording disk drives include a slider attached toa suspension and a media such as a disk. The slider typically includes amagnetic read transducer (reader) and a magnetic write transducer(writer). The writer magnetically records data as bits along a tracks inthe media. The reader reads data back from the media.

The trend in magnetic recording is to higher areal densities. Forexample, densities of up to 1 Tbit/in² and higher are desired. To read,write and store data at such areal densities, the reader, writer, andmedia have evolved. For example, tunneling magnetoresistance (TMR)sensors may be used to read higher density media with sufficiently highsignals. Perpendicular magnetic recording (PMR) writers and heatassisted magnetic recording (HAMR) writers, which utilize laser light toheat regions of the media to temperatures near and/or above the Curietemperature of the media, may be used to write to such high densitymedia. Similarly, magnetic media have been developed to store data athigher areal densities.

Although such conventional magnetic recording disk drives function,there are drawbacks. For example, for high areal densities reducednoise, improved signal to noise ratio, and mechanisms to address otherissues may be desired. Media that may be capable of providing thesefeatures are desired. Accordingly, what is needed is a system and methodfor improving the performance of a magnetic recording disk drive athigher areal densities.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 depicts a side view of a magnetic recording apparatus, such as adisk drive.

FIG. 2 depicts an exemplary embodiment of a magnetic recording mediathat may be usable in a magnetic recording apparatus.

FIGS. 3A and 3B are alloy diagrams depicting the phases of an alloy inanother exemplary embodiment of an intermediate layer for a magneticrecording media.

FIG. 4 depicts another exemplary embodiment of a magnetic recordingmedia that may be usable in a magnetic recording apparatus.

FIG. 5 depicts another exemplary embodiment of an intermediate layer fora magnetic recording media.

FIG. 6 depicts another exemplary embodiment of an intermediate layer fora magnetic recording media.

FIG. 7 depicts another exemplary embodiment of an intermediate layer fora magnetic recording media.

FIG. 8 depicts another exemplary embodiment of an intermediate layer fora magnetic recording media.

FIG. 9 depicts another exemplary embodiment of an intermediate layer fora magnetic recording media.

FIG. 10 is a flow chart depicting an exemplary embodiment of a methodfor providing magnetic recording media usable in a magnetic recordingapparatus.

FIG. 11 depicts a flow chart of another exemplary embodiment of a methodfor fabricating a magnetic recording media usable in a disk drive.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 depicts a side view of an exemplary embodiment of a portion of amagnetic recording apparatus 100. In the embodiment shown, the apparatus100 is a disk drive 100. For clarity, FIG. 1 is not to scale. Forsimplicity not all portions of the disk drive 100 are shown. Inaddition, although the disk drive 100 is depicted in the context ofparticular components other and/or different components may be used. Forexample, circuitry used to drive and control various portions of thedisk drive 100 is not shown. The disk drive 100 may be a PMR disk drive,a HAMR disk drive or another type of disk drive. For simplicity, onlysingle components 102, 110, 120 and 150 are shown. However, multiples ofeach components 102, 110, 120, and/or 150 and their sub-components,might be used.

The disk drive 100 includes a slider 110, a transducer 120 and media150. Additional and/or different components may be included in the diskdrive 100. For example, if the write transducer 120 is a HAMR writer, alaser might be included on or affixed to the slider 110. Although notshown, the slider 110, and thus the laser assembly 130 and transducer120 are generally attached to a suspension (not shown).

The transducer 120 is fabricated on the slider 110 and includes anair-bearing surface (ABS) proximate to the media 150 during use. Ingeneral, the transducer 120 includes a write transducer and a readtransducer. However, for clarity, only the write portion of the writer120 is shown. The write transducer 120 includes a write pole 124 andcoil(s) 126. The media 150 is configured to be usable at higherrecording densities and, in some embodiments, to be used in the diskdrive 100. In some embodiments, the media 150 is configured to storedata with an areal density of at least 0.8 Tbit/in². In some suchembodiment, the media 150 may store data having an areal density of 1Tbit/in² or more.

FIG. 2 depicts an exemplary embodiment of the magnetic media 150 usablein a disk drive such as the disk drive 100. For clarity, FIG. 2 is notto scale. A substrate 152 on which the magnetic recording media 150 isfabricated is also shown. Referring to FIGS. 1-2, the magnetic recordingmedia includes a magnetic recording stack 154 and at least oneintermediate layer 160 between the magnetic recording stack 154 and thesubstrate. For simplicity not all portions of the magnetic recordingmedia are shown. Other and/or additional layers may be present. Forexample, although not shown in FIG. 2, an overcoat layer is generallyused. The overcoat layer would reside on the magnetic recording stack154 and between the magnetic recording stack 154 and the slider 110.Other layer(s) may also reside between the layers 152 and 160. However,the relationships between the layers 152, 154 and 160 may be preserved.Stated differently, the multiple phase intermediate layer(s) 160 arebetween the substrate 152 and the magnetic recording stack.

The magnetic recording stack 154 stores magnetic data. The magneticrecording stack 154 is on the intermediate layer(s) 160 such that theintermediate layer(s) are between the substrate 152 and the magneticrecording stack 156. In some embodiments, the magnetic recording stack154 includes multiple layers. For example, the magnetic recording stack154 may include including exchange-control layers or exchange-breaklayers as well as magnetic layer(s) in which data are stored.

The intermediate layer(s) 160 include one or more layers. At least oneof these layers is a multi-phase layer. The multi-phase layer is analloy layer having multiple phases. The multiple phases include amajority phase and a secondary phase. Additional phases might bepresent. The majority phase has a first diffusion constant. Thesecondary phase has a second diffusion constant greater than the firstdiffusion constant. Thus, it is believed that the secondary phasesegregates to the grain boundaries of the multi-phase layer. Themajority phase has a first crystal structure, a first orientation, and afirst composition. The secondary phase is a precipitate that segregatesout of the majority. The secondary phase may have a second compositiondifferent from the first composition of the majority phase. The crystalstructure and orientation of the secondary phase may be different fromor the same as that of the majority phase. The first orientation and thefirst crystal structure of the majority phase are substantiallyunchanged by the secondary phase. For example, in the Ru layersdescribed below, the majority phase of the layer may remain with ahexagonal close packed (HCP) crystal structure and the desiredorientation despite the presence of the secondary phase. In someembodiments, this secondary phase is a eutectic phase.

The multi-phase layers may be considered to be formed by a primarymaterial, or constituent, and at least one additional material thatalloy to form the majority and secondary phases described above. Theprimary material may be an element or an alloy. Additional material(s)may be added in order to form the multiphase layer. The additionalmaterial(s) have limited solubility in the primary material(s) and formthe secondary (e.g. eutectic) phase with the primary material(s) over aparticular concentration range.

Composition of the alloy(s) used in the multi-phase layers mayunderstood with reference to FIGS. 3A and 3B. Referring to FIGS. 2-3B,FIGS. 3A and 3B are alloy diagrams for two alloys that exhibitmulti-phase behavior. FIG. 3A depicts an alloy diagram 180 for a firstalloy, while FIG. 3B depicts and alloy diagram 180′ for a second alloy.The alloys include a primary material, or primary constituent. In thealloy diagrams 180, the atomic percentage of the primary constituent isalong the horizontal axis and the temperature is along the verticalaxis. As can be seen in the diagrams 180 and 180′, for an alloy formedpurely of the primary constituent (100 atomic percent primaryconstituent), only the majority phase is present below the meltingpoint. This region is labeled “Primary” in the diagrams 180 and 180′.Only the majority phase continues to be present for larger percentagesof the primary constituent that are less than one hundred percent. Asthe fraction of the primary constituent is reduced, corresponding largeramounts of an additional material having limited solubility in theprimary constituent are present. Thus, the secondary phase is becomespresent (labeled 2^(nd) in FIGS. 3A and 3B). For alloys in thisconcentration range, the secondary phase may precipitate out of theprimary phase and segregate to the grain boundaries. For even lowerconcentrations of the primary constituent(s), the alloys may have otherphases. Thus, the multi-phase layer(s) that are part of the intermediatelayer 160 may be configured to have the additional material(s) in aconcentration range that allows for the primary and secondary phases tobe present. Using alloy diagrams analogous to those shown in FIGS.3A-3B, material(s) that may be usable in the multi-phase layer may beselected.

For example, the multi-phase layer(s) in the intermediate layer(s) 160may include an alloy that contains Ru. A multi-phase Ru-containing layermay include Ru and Co. In such a multi-phase RuCo layer, the Ru and Comay be alloyed with one or more other materials. There may be equalamount of Ru and Co. In other embodiments, there may be differentconcentrations of Ru and Co. However, both types of alloys are referredto herein as RuCo. In some embodiments, the additional material(s) addedto RuCo to form the multi-phase layer may be selected from Mo, Nb, W,Al, Be, C, Dy, Gd, Ge, Ho, Lu, Nd, Pd, Sm, Tb, Y and Zr. The combinationis an alloy that forms the majority and secondary phases described abovefor certain concentration ranges. The secondary phase formed in suchRuCo layers is a eutectic phase. For example, if the multi-phase layeris a (RuCo)_(100-w)X_(w) layer, where X is a material and w is aconcentration, then X:w may be as follows: Al:0-30, Be:0-25, C:0-20,Dy:0-20, Gd:0-20, Ge:0-25, Ho:0-20, Lu:0-20, Mo:0-35, Nb:0-20, Nd:0-20,Pd:0-30, Sm:0-20, Tb:0-20, W:0-50, Y:0-20, Zr:0-20. Note that althoughzero concentrations are indicated above for the second constituents,there must be some of the material present. For example, if Al used, theconcentration of Al is greater than zero and not more than thirty atomicpercent. Such alloys include a first phase and a secondary eutecticphase having the properties described above.

Similarly, the multi-phase Ru-containing layer may include one or morelayers in which Ru is alloyed with another material. In someembodiments, the additional material(s) may be selected from Mo, Nb, W,Al, Be, C, Dy, Gd, Ge, Ho, Lu, Nd, Pd, Sm, Tb, Y and Zr. The combinationis a Ru alloy that forms the majority and secondary phases describedabove for certain concentration ranges. In some embodiments, thesecondary phase formed is a eutectic phase. For example, the multi-phaseRu containing layer may be a Ru—Mo alloy that includes not more thanthirty-five atomic percent Mo. In other embodiments, the Ru-containinglayer may be a Ru—Nb alloy that includes not more than twenty atomicpercent Nb. In still other embodiments, the multi-phase Ru-containinglayer may be a Ru—W alloy that includes not more than fifty percent of Wif the Ru-containing layer includes W. If Al, Be, C, Dy, Gd, Ho, Lu, Sm,Tb, Y, Zr are used, then the multi-phase alloy includes Ru and bothgreater than zero and not more than twenty atomic percent of Al, Be, C,Dy, Gd, Ho, Lu, Sm, Tb, Y, Zr. If Ge is used, then the multi-phase alloyincludes Ru and both greater than zero and not more than twenty-fiveatomic percent of Ge. If Pd is used, then the multi-phase alloy includesRu and both greater than zero and not more than thirty atomic percent ofPd.

Further, multiple Ru layers may be included. One or more of these Rulayers may be multi-phase alloys. In some embodiments, two Ru layersthat are sputtered at different pressures may be included. For example,a first Ru alloy layer may be sputtered at a first pressure and a secondRu layer may be sputtered at a second pressure. The second pressure isgreater than the first pressure. For example, the first layer may be aRu alloy layer that is sputtered at less than twenty mTorr. In some suchembodiments, the pressure is on the order of seven mTorr. The secondlayer may be a Ru alloy layer that is sputtered at greater than 60 mTorrand not more than 120 mTorr. For example, the pressure may be ninetymTorr. The intermediate layer(s) 160 may include multiple Ru alloylayers and a Ru—Co containing layer. Some combination of theseRu-containing layers may be a multi-phase layer.

The magnetic media 150 may have improved performance. The magnetic media150 includes intermediate layer(s) 160 that has at least one multi-phaselayer. In this multi-phase layer, the grain size and distribution may becontrolled by the segregation of secondary (e.g. eutectic) phase to thegrain boundaries. In other words, the grain size (measure of thediameter/length of the grain) may be smaller and the variation in grainsize may be smaller. This reduction in grain size and distribution maybe passed on to the magnetic recording stack 154. As a result, thecoercive squareness, nucleation field, coercivity and thermal stabilityof the magnetic recording stack 154 may be improved. Noise may thus bereduced and signal-to-noise ratio enhanced. Thus, performance of themagnetic recording media 150 at higher densities may be improved.

FIG. 4 depicts an exemplary embodiment of the magnetic media 150′ usablein a disk drive such as the disk drive 100. For clarity, FIG. 4 is notto scale. The magnetic media 150′ is analogous to the magnetic media 150depicted in FIGS. 1-2. Thus, analogous components have similar labels.The magnetic media 150′ includes a substrate 152, intermediate layer(s)and magnetic recording stack 154 are analogous to the substrate 152,intermediate layer(s) and magnetic recording stack 154 depicted in FIG.2. In the embodiment shown, the substrate 152 may be AlMg. Forsimplicity not all portions of the magnetic recording media are shown.Other and/or additional layers may be present.

In addition to the substrate 152, intermediate layer(s) 160 and magneticrecording stack 154, optional adhesion layer(s) 155,antiferromagnetically coupled soft underlayer 156, orientation controllayer 158 and overcoat layer 159 are shown. The overcoat layer 159 is onthe magnetic recording stack 154 and between the magnetic recordingstack 154 and the slider 110. The optional adhesion layer(s) 155 mayinclude Cr, CrTa, and/or CrTi layers. Although not shown, Ta based seedlayer(s), Ni—W, Ni—W—Al, and/or Ni—W—Al—Fe based seed layer(s) (notexplicitly shown in FIG. 4) may also be included. The magnetic recordingstack 154 is analogous to the magnetic recording stack 154 of FIG. 2 andstores magnetic data. The intermediate layer(s) 160 include one or morelayers, at least one of which is a multi-phase layer. The multi-phaselayer is an alloy layer having a majority phase and a secondary phase.The secondary phase has a diffusion constant higher than that of themajority phase. Thus, it is believed that the secondary phase segregatesto the grain boundaries of the multi-phase layer. The majority phase hasa crystal structure, an orientation, and a composition. The secondaryphase is a precipitate that segregates out of the majority. Thesecondary phase may have a composition different from that of themajority phase. The crystal structure and orientation of the secondaryphase may be different from or the same as that of the majority phase.The orientation and the crystal structure of the majority phase aresubstantially unchanged by the presence of the secondary phase.

The magnetic media 150′ may have improved performance for similarreasons as the magnetic media 150. The intermediate layer(s) 160 have atleast one multi-phase layer for which the grain size and distributionmay be controlled by the segregation of secondary (e.g. eutectic) phaseto the grain boundaries. Thus, the grain size may be smaller and thevariation in grain size may be reduced. This reduction in grain size anddistribution may be passed on to the magnetic recording stack 154. As aresult, noise may thus be reduced and signal-to-noise ratio enhanced.Thus, performance of the magnetic recording media 150′ at higherdensities may be improved.

FIG. 5 depicts an exemplary embodiment of the intermediate layer(s) 160′that may be usable in a magnetic media such as the media 150 and/or150′. The intermediate layer(s) 160′ are analogous to the intermediatelayer(s) 160. For clarity, FIG. 5 is not to scale. The intermediatelayer(s) 160′ includes two Ru alloy layers 162 and 164. The layer 162 isa low pressure Ru layer. The layer 164 is a high pressure Ru layer thatis also a multi-phase layer. The layer 162 is termed a low pressurelayer because the layer 162 is formed at a lower pressure than the layer164. For example, the low pressure layer 162 may be sputtered at lessthan twenty mTorr. In some such embodiments, the pressure is on theorder of seven mTorr. The high pressure multi-phase Ru alloy layer 164is on the low pressure Ru layer 162. Thus, layer 164 may adjoin themagnetic recording stack 154 and is between the magnetic recording stack154 and the layer 162. The multi-phase high pressure Ru layer 164 issputtered at greater than 60 mTorr and not more than 120 mTorr. Forexample, the pressure may be ninety mTorr.

The high pressure Ru alloy layer 164 is a multi-phase layer. Thus, thehigh pressure Ru alloy layer 164 includes a majority phase and asecondary phase. The characteristics of the majority and secondaryphases are as discussed above. The secondary phase has a diffusionconstant greater than the majority phase's diffusion constant. Thus, itis believed that the secondary phase precipitates out of the majorityand segregates to the grain boundaries of the layer 164. The majorityphase has a first crystal structure, a first orientation, and a firstcomposition. The secondary phase may have a second composition differentfrom the first composition of the majority phase. The crystal structureand orientation of the secondary phase may be different from or the sameas that of the majority phase. The first orientation and the firstcrystal structure of the majority phase are substantially unchanged bythe secondary phase. For example, the majority phase of the layer 164may remain with a hexagonal close packed (HCP) crystal structure and thedesired orientation despite the presence of the secondary phase. In someembodiments, this secondary phase is a eutectic phase.

In some embodiments, the layer 164 is formed by alloying Ru withadditional materials. The additional material(s) added to Ru to form themulti-phase layer may be selected from Mo, Nb, W, Al, Be, C, Dy, Gd, Ge,Ho, Lu, Nd, Pd, Sm, Tb, Y and Zr. The combination is an alloy that formsthe majority and secondary phases described above for certainconcentration ranges. For example, if the multi-phase layer is a(Ru)_(100-w)X_(w) layer, where X is a material and w is a concentration,then X:w may be as follows: Al:0-30, Be:0-25, C:0-20, Dy:0-20, Gd:0-20,Ge:0-25, Ho:0-20, Lu:0-20, Mo:0-35, Nb:0-20, Nd:0-20, Pd:0-30, Sm:0-20,Tb:0-20, W:0-50, Y:0-20, Zr:0-20. Note that in the concentrations above,a concentration of zero for the additional material indicates thepresence of greater than zero atomic percent of the material. Suchalloys include a first phase and a secondary eutectic phase having theproperties described above.

The intermediate layer 160′ may aid in improving the performance of themagnetic media 150 and/or 150′. The grain size and distribution may becontrolled by the segregation of secondary (e.g. eutectic) phase to thegrain boundaries in the layer 164. Thus, the grain size may be smallerand the variation in grain size may be reduced. This reduction in grainsize and distribution may be passed on to the magnetic recording stack154. As a result, noise may thus be reduced and signal-to-noise ratioenhanced. Thus, performance of the magnetic recording media 150/150′ athigher densities may be improved by the layer 160′.

FIG. 6 depicts an exemplary embodiment of the intermediate layer(s) 160″that may be usable in a magnetic media such as the media 150 and/or150′. For clarity, FIG. 6 is not to scale. The intermediate layer(s)160″ are analogous to the intermediate layer(s) 160 and/or 160′. Theintermediate layer(s) 160′ includes two Ru alloy layers 162′ and 164′.The layer 162′ is a low pressure Ru layer analogous to the layer 162.The layer 164′ is a high pressure Ru layer that is analogous to thelayer 164. The layer 162′ is termed a low pressure layer because thelayer 162′ is formed at a lower pressure than the layer 164′. Thepressures used for the layers 162′ and 164′ are analogous to those usedfor the layers 162 and 164, respectively.

In the intermediate layer(s) 160″, the high pressure layer 164′ is a Rulayer while the low pressure layer 162′ is a multi-phase layer. Thus,the low pressure Ru alloy layer 162′ includes a majority phase and asecondary phase. The characteristics of the majority and secondaryphases are as discussed above. The secondary phase has a diffusionconstant greater than the majority phase's diffusion constant. Thus, itis believed that the secondary phase precipitates out of the majorityand segregates to the grain boundaries of the low pressure layer 162′.The majority phase has a first crystal structure, a first orientation,and a first composition. The secondary phase may have a secondcomposition different from the first composition of the majority phase.The crystal structure and orientation of the secondary phase may bedifferent from or the same as that of the majority phase. The firstorientation and the first crystal structure of the majority phase aresubstantially unchanged by the secondary phase. For example, themajority phase of the layer 162′ may remain with a hexagonal closepacked (HCP) crystal structure and the desired orientation despite thepresence of the secondary phase. In some embodiments, this secondaryphase is a eutectic phase.

In some embodiments, the layer 162′ is formed by alloying Ru withadditional materials. The additional material(s) added to Ru to form themulti-phase layer may be selected from Mo, Nb, W, Al, Be, C, Dy, Gd, Ge,Ho, Lu, Nd, Pd, Sm, Tb, Y and Zr. The combination is an alloy that formsthe majority and secondary phases described above for certainconcentration ranges. For example, if the multi-phase layer is a(Ru)_(100-w)X_(w) layer, where X is a material and w is a concentration,then X:w may be as follows: Al:0-30, Be:0-25, C:0-20, Dy:0-20, Gd:0-20,Ge:0-25, Ho:0-20, Lu:0-20, Mo:0-35, Nb:0-20, Nd:0-20, Pd:0-30, Sm:0-20,Tb:0-20, W:0-50, Y:0-20, Zr:0-20. A concentration of 0 atomic percentfor the additional material corresponds to a concentration of greaterthan zero atomic percent. Such alloys include a first phase and asecondary eutectic phase having the properties described above.

The intermediate layer 160″ may aid in improving the performance of themagnetic media 150 and/or 150′. The grain size and distribution may becontrolled by the segregation of secondary (e.g. eutectic) phase to thegrain boundaries in the layer 162′. Thus, the grain size may be smallerand the variation in grain size may be reduced. This reduction in grainsize and distribution may be passed on to the magnetic recording stack154. As a result, noise may thus be reduced and signal-to-noise ratioenhanced. Thus, performance of the magnetic recording media 150/150′ athigher densities may be improved by the layer 160″.

FIG. 7 depicts an exemplary embodiment of the intermediate layer(s)160′″ that may be usable in a magnetic media such as the media 150and/or 150′. For clarity, FIG. 7 is not to scale. The intermediatelayer(s) 160′″ are analogous to the intermediate layer(s) 160, 160′and/or 160″. The intermediate layer(s) 160′ includes two Ru alloy layers162′ and 164. The layer 162′ is a low pressure Ru layer analogous to thelayer 162/162′. The layer 164 is a high pressure Ru layer that isanalogous to the layer 164′. The layer 162′ is termed a low pressurelayer because the layer 162′ is formed at a lower pressure than thelayer 164′. The pressures used for the layers 162′ and 164′ areanalogous to those used for the layers 162 and 164, respectively.

The layers 162′ and 164 are both multi-phase alloy layers. Thus, each ofthe layers 162′ and 164 includes a majority phase and a secondary phase.The characteristics of the majority and secondary phases are asdiscussed above. The secondary phase has a diffusion constant greaterthan the majority phase's diffusion constant. Thus, it is believed thatthe secondary phase precipitates out of the majority and segregates tothe grain boundaries of the layers 162′ and 164. The majority phase hasa first crystal structure, a first orientation, and a first composition.The secondary phase may have a second composition different from thefirst composition of the majority phase. The crystal structure andorientation of the secondary phase may be different from or the same asthat of the majority phase. The first orientation and the first crystalstructure of the majority phase are substantially unchanged by thesecondary phase. For example, the majority phase of the layers 162′ and164 may remain with a hexagonal close packed (HCP) crystal structure andthe desired orientation despite the presence of the secondary phase. Insome embodiments, this secondary phase is a eutectic phase.

In some embodiments, the layers 162′ and 164 are each formed by alloyingRu with additional materials. The additional material(s) added to Ru toform the multi-phase layer may be selected from Mo, Nb, W, Al, Be, C,Dy, Gd, Ge, Ho, Lu, Nd, Pd, Sm, Tb, Y and Zr. The combination is analloy that forms the majority and secondary phases described above forcertain concentration ranges. For example, if the multi-phase layer is a(Ru)_(100-w)X_(w) layer, where X is a material and w is a concentration,then X:w may be as follows: Al:0-30, Be:0-25, C:0-20, Dy:0-20, Gd:0-20,Ge:0-25, Ho:0-20, Lu:0-20, Mo:0-35, Nb:0-20, Nd:0-20, Pd:0-30, Sm:0-20,Tb:0-20, W:0-50, Y:0-20, Zr:0-20. Note that a 0 atomic percent in theprevious sentence indicates a concentration of greater than zero atomicpercent for the additional material(s). Such alloys include a firstphase and a secondary eutectic phase having the properties describedabove. Note that the compositions of the layers 162′ and 164 may be thesame or different. For example, layers 162′ and 164 may be both Ru—Molayers. In another embodiment, the layer 162′ may be a Ru—W layer whilethe layer 164 is a Ru—Mo layer.

The intermediate layer 160′″ may aid in improving the performance of themagnetic media 150 and/or 150′. The grain size and distribution may becontrolled by the segregation of secondary (e.g. eutectic) phase to thegrain boundaries in the layers 162′ and 164. Thus, the grain size may besmaller and the variation in grain size may be reduced. This reductionin grain size and distribution may be passed on to the magneticrecording stack 154. As a result, noise may thus be reduced andsignal-to-noise ratio enhanced. Thus, performance of the magneticrecording media 150/150′ at higher densities may be improved by thelayer 160′″.

FIG. 8 depicts an exemplary embodiment of the intermediate layer(s) 170that may be usable in a magnetic media such as the media 150 and/or150′. For clarity, FIG. 8 is not to scale. The intermediate layer(s) 170are analogous to the intermediate layer(s) 160, 160′, 160″ and/or 160′″.The intermediate layer(s) 170 includes a RuCo layer 172 and twoRu-containing layers 174 and 176. In some embodiments, the RuCo layer172 is at least two nanometers thick and not more than twelve nanometersthick. In some such embodiments, the RuCo layer 172 is at least fivenanometers thick and not more than eight nanometers thick. The RuColayer 172 is an alloy. The layers 174 and 176 include Ru. At least oneof the layers 174 and 176 is a multi-phase layer. Thus, the layers 174and 176 are labeled as “optionally two phase Ru-alloy layer” because oneor both of the layers 174 and 176 may have two phases. In someembodiments, only the layer 174 has two phases and would thus beanalogous to the layers 162′. In other embodiments, only the layer 176has two phases. In such embodiments, the layer 176 is analogous to thelayer 164. In other embodiments, both layers 174 and 165 have two phasesand may thus be analogous to the layers 162′ and 164, respectively. Thelayer 174 is a low pressure Ru layer analogous to the layer 162 or 162′.In some embodiments, the low pressure Ru layer 174 may be at least onenanometer thick and not more than ten nanometers thick. The low pressureRu layer 174 may be at least two nanometers thick and not more than sixnanometers thick. The structure and composition of the layer 174 isanalogous to the layer 162 or 162′. The layer 176 is a high pressure Rulayer that is analogous to the layer 164 or 164′. In some embodiments,the high pressure Ru layer 176 is at least four nanometers thick and notmore than twelve nanometers thick. In some such embodiments, the highpressure Ru layer 176 is at least six nanometers thick and not more thanten nanometers thick. The structure and composition of the layer 176 isanalogous to the layer 164 or 164′. In one embodiment, the intermediatelayer(s) 170 include a RuCo alloy layer 172, a low pressure Ru layer 174analogous to the layer 162, and a high pressure multi-phase layer 176analogous to the layer 164. In another embodiment, the intermediatelayer(s) 170 include a RuCo alloy layer 172, a low pressure multi-phaseRu layer 174 analogous to the layer 162′, and a high pressure layer 176analogous to the layer 164′. In another embodiment, the intermediatelayer(s) 170 include a RuCo alloy layer 172, a low pressure multi-phaseRu layer 174 analogous to the layer 162′, and a high pressuremulti-phase layer 176 analogous to the layer 164. Thus, one or both ofthe layers 174 and 176 includes a majority phase and a secondary phase.The characteristics of the majority and secondary phases are asdiscussed above.

The intermediate layer 170 may aid in improving the performance of themagnetic media 150 and/or 150′. The grain size and distribution may becontrolled by the segregation of secondary (e.g. eutectic) phase to thegrain boundaries in the layers 174 and/or 176. Thus, the grain size maybe smaller and the variation in grain size may be reduced. Thisreduction in grain size and distribution may be passed on to themagnetic recording stack 154. As a result, noise may thus be reduced andsignal-to-noise ratio enhanced. Thus, performance of the magneticrecording media 150/150′ at higher densities may be improved by thelayer 170.

FIG. 9 depicts an exemplary embodiment of the intermediate layer(s) 170′that may be usable in a magnetic media such as the media 150 and/or150′. For clarity, FIG. 9 is not to scale. The intermediate layer(s)170′ are analogous to the intermediate layer(s) 160, 160′, 160″ and/or160′″. The intermediate layer(s) 170′ includes a multi-phase RuCo layer172′ and two Ru-containing layers 174 and 176. The layers 174 and 176include Ru. At least one of the layers 174 and 176 is a multi-phaselayer. Thus, the layers 174 and 176 are labeled as “optionally two phaseRu-alloy layer” because one or both of the layers 174 and 176 may havetwo phases. In some embodiments, only the layer 174 has two phases andwould thus be analogous to the layers 162′. In other embodiments, onlythe layer 176 has two phases. In such embodiments, the layer 176 isanalogous to the layer 164. In other embodiments, both layers 174 and165 have two phases and may thus be analogous to the layers 162′ and164, respectively. The layer 174 is a low pressure Ru layer analogous tothe layer 162 or 162′. The structure and composition of the layer 174 isanalogous to the layer 162 or 162′. The layer 176 is a high pressure Rulayer that is analogous to the layer 164 or 164′. The structure andcomposition of the layer 176 is analogous to the layer 164 or 164′. Insome embodiments, the low pressure Ru layer 174 may be at least onenanometer thick and not more than ten nanometers thick. The low pressureRu layer 174 may be at least two nanometers thick and not more than sixnanometers thick. In some embodiments, the high pressure Ru layer 176 isat least four nanometers thick and not more than twelve nanometersthick. The high pressure Ru layer 176 may be at least six nanometersthick and not more than ten nanometers thick.

The RuCo layer 172′ includes RuCo alloyed with at least a secondmaterial. In some embodiments, the RuCo layer 172′ is at least twonanometers thick and not more than twelve nanometers thick. In someembodiments, the RuCo layer 172′ is at least five nanometers thick andnot more than eight nanometers thick. Thus, the RuCo layer 172′ includesa majority phase and a secondary phase. The characteristics of themajority and secondary phases are as discussed above. In someembodiments, the additional material(s) added to RuCo to form themulti-phase layer may be selected from Mo, Nb, W, Al, Be, C, Dy, Gd, Ge,Ho, Lu, Nd, Pd, Sm, Tb, Y and Zr. The combination is an alloy that formsthe majority and secondary phases described above for certainconcentration ranges. The secondary phase formed in such RuCo layers isa eutectic phase. For example, if the multi-phase layer is a(RuCo)_(100-w)X_(w) layer, where X is a material and w is aconcentration, then X:w may be as follows: Al:0-30, Be:0-25, C:0-20,Dy:0-20, Gd:0-20, Ge:0-25, Ho:0-20, Lu:0-20, Mo:0-35, Nb:0-20, Nd:0-20,Pd:0-30, Sm:0-20, Tb:0-20, W:0-50, Y:0-20, Zr:0-20. Note that althoughzero concentrations are indicated above for the second constituents,there must be some of the material present. Such an alloys include afirst, majority phase and a secondary eutectic phase having theproperties described above.

In one embodiment, the intermediate layer(s) 170′ include a multi-phaseRuCo alloy layer 172′, a low pressure Ru layer 174 analogous to thelayer 162, and a high pressure multi-phase layer 176 analogous to thelayer 164. In another embodiment, the intermediate layer(s) 170′ includea multi-phase RuCo alloy layer 172′, a low pressure multi-phase Ru layer174 analogous to the layer 162′, and a high pressure layer 176 analogousto the layer 164′. In another embodiment, the intermediate layer(s) 170′include a multi-phase RuCo alloy layer 172′, a low pressure multi-phaseRu layer 174 analogous to the layer 162′, and a high pressuremulti-phase layer 176 analogous to the layer 164. Thus, the RuCo layer172′ and one or both of the layers 174 and 176 includes a majority phaseand a secondary phase. The characteristics of the majority and secondaryphases are as discussed above.

The intermediate layer 170′ may aid in improving the performance of themagnetic media 150 and/or 150′. The grain size and distribution may becontrolled by the segregation of secondary (e.g. eutectic) phase to thegrain boundaries in the layers 172′ and one or both of the layers 174and 176. Thus, the grain size may be smaller and the variation in grainsize may be reduced. This reduction in grain size and distribution maybe passed on to the magnetic recording stack 154. As a result, noise maythus be reduced and signal-to-noise ratio enhanced. Thus, performance ofthe magnetic recording media 150/150′ at higher densities may beimproved by the layer 170′.

FIG. 10 depicts an exemplary embodiment of a method 200 for providing amagnetic recording media such as the media 150. For simplicity, somesteps may be omitted, interleaved, and/or combined. The method 200 isalso described in the context of providing a magnetic recording diskdrive 100 and media 150 depicted in FIGS. 1-2. However, the method 200may be used to fabricate multiple magnetic recording disks atsubstantially the same time. The method 200 may also be used tofabricate other magnetic recording media. The method 200 is alsodescribed in the context of particular layers. A particular layer mayinclude multiple materials and/or multiple sub-layers. The method 200also may start after formation of other portions of the magneticrecording media.

Referring to FIGS. 1-2 and 4, the intermediate layer 160 is provided onthe substrate, via step 202. Step 202 may include depositing providingone or more multi-phase layers. For example, the layer 160′, 160″,160′″, 160″, 170 and/or 170′ may be provided in step 202. This mayinclude sputtering, plating, chemical vapor depositing, or otherwisedepositing the materials to form the multi-phase layer. Step 202 mayalso include formation of single phase layers. For example, the layer160′ which has one multi-phase layer 162 and one single phase layer 164may be fabricated using step 202.

The magnetic recording stack 154 is provided on the intermediatelayer(s) 160, via step 204. Step 204 may include depositing multiplelayers such as exchange coupling or exchange breaking layer(s).Fabrication of the media 150/150′ may then be completed.

Using the method 200, the magnetic disk drive 100 and magnetic recordingmedia 150/150′ may be provided. Thus, the benefits of the magneticrecording media 150/150′ and magnetic recording transducer 120 may beachieved.

FIG. 11 depicts an exemplary embodiment of a method 210 for providing amagnetic recording media such as the media 150′. For simplicity, somesteps may be omitted, interleaved, and/or combined. The method 210 isalso described in the context of providing a disk drive 100 and media150′ depicted in FIGS. 1 and 4. However, the method 210 may be used tofabricate multiple magnetic recording heads at substantially the sametime. The method 210 may also be used to fabricate other magneticrecording media. The method 210 is also described in the context ofparticular layers. A particular layer may include multiple materialsand/or multiple sub-layers. The method 210 also may start afterformation of other portions of the magnetic recording media 150′.

Referring to FIGS. 1, 4 and 11, the adhesion layer(s) 155 andantiferromagnetically coupled soft underlayer 156 are optionallyprovided on the substrate 152 via steps 212 and 214, respectively. Theoptional orientation control layer 158 is deposited, via step 216. TheRuCo layer 172/172′ may be provided in step 218. Step 218 may includeproviding a multi-phase RuCo layer. Alternatively, a single phase RuColayer may be formed in step 218. A low pressure Ru layer is deposited instep 220. Step 220 may include forming a single phase or a multi-phaselayer. Step 220 includes a low pressure sputter deposition of thematerial(s) for the layer 174/174′. A high pressure Ru layer isdeposited in step 222. Step 222 may include forming a single phase or amulti-phase layer. Step 222 includes a high pressure sputter depositionof the material(s) for the layer 176/176′.

The magnetic recording layer 154 may be deposited, via step 224. Step222 may include depositing multiple magnetic layers. Fabrication of themagnetic recording media 150/150′ may then be completed. For example,the overcoat layer 159 may also be provided after step 222.

Using the method 210, the magnetic disk drive 100 and magnetic recordingmedia 150/150′ may be provided. Thus, the benefits of the magneticrecording media 150′ and disk drive 100 may be achieved.

We claim:
 1. A magnetic recording media usable in a magnetic storagedevice, the magnetic recording media comprising: a substrate; at leastone intermediate layer with a majority phase having a first diffusionconstant and a secondary phase having a second diffusion constantgreater than the first diffusion constant, the at least one intermediatelayer including a first intermediate layer, a second intermediate layerand a third intermediate layer, the second intermediate layer beingbetween the first intermediate layer and the third intermediate layer,each of the first intermediate layer, the second intermediate layer andthe third intermediate layer including Ru, at least one of the secondintermediate layer and the third intermediate layer having the majorityphase and the secondary phase, the first intermediate layer including Ruand Co, wherein the first intermediate layer further includes at leastone of Mo, Nb, W, Al, Be, C, Dy, Gd, Ge, Ho, Lu, Nd, Pd, Sm, Tb, Y orZr; and a magnetic recording stack for storing magnetic data, themagnetic recording stack residing on the third intermediate layer suchthat the at least one intermediate layer is between the substrate andthe magnetic recording stack.
 2. The magnetic recording media of claim 1wherein the secondary phase is a eutectic phase.
 3. The magneticrecording media of claim 1 wherein the majority phase has a firstcrystal structure, a first orientation, and a first composition, thesecondary phase being a precipitate having a second compositiondifferent from the first composition, the first orientation and thefirst crystal structure being substantially unchanged by the secondaryphase.
 4. The magnetic recording media of claim 1 wherein acompositional percentage of Ru in the first intermediate layer is atmost 80%.
 5. The magnetic recording media of claim 1 wherein the secondintermediate layer is sputtered at a first sputtering pressure and thethird intermediate layer is sputtered at a second sputtering pressure,the second sputtering pressure being greater than the first sputteringpressure.
 6. The magnetic recording media of claim 1 wherein the secondintermediate layer further includes at least one of Mo, Nb, W, Al, Be,C, Dy, Gd, Ge, Ho, Lu, Nd, Pd, Sm, Tb, Y and Zr and wherein the thirdintermediate layer includes at least one of Mo, Nb, W, Al, Be, C, Dy,Gd, Ge, Ho, Lu, Nd, Pd, Sm, Tb, Y and Zr.
 7. The magnetic recordingmedia of claim 1 wherein at least one of the second intermediate layerand the third intermediate layer also includes an additional materialselected from Mo, Nb, W, Al, Be, C, Dy, Gd, Ge, Ho, Lu, Nd, Pd, Sm, Tb,Y and Zr.
 8. The magnetic recording media of claim 7 wherein at leastone of the second intermediate layer and the third intermediate layerincludes not more than thirty atomic percent Mo if the additionalmaterial is Mo, wherein the at least one of the second intermediatelayer and the third intermediate layer includes not more than twentyatomic percent Nb if the additional material is Nb, and wherein the atleast one of the second intermediate layer and the third intermediatelayer includes not more than 50 of W if the at least one of the secondintermediate layer and the third intermediate layer includes W.
 9. Themagnetic recording media of claim 8 wherein at least one of the secondintermediate layer and the third intermediate layer includes W.
 10. Themagnetic recording media of claim 1 wherein at least one of the firstintermediate layer and the second intermediate layer has a plurality ofgrains with a plurality of grain boundaries, the secondary phasesegregating to the plurality of grain boundaries.
 11. The magneticrecording media of claim 1 further comprising: a soft underlayer on thesubstrate; an orientation control layer on the soft underlayer, theorientation control layer being between the soft underlayer and the atleast one intermediate layer.
 12. A magnetic recording media usable in amagnetic storage device, the magnetic recording media comprising: asubstrate; a first intermediate layer on the substrate, the firstintermediate layer including Ru, Co and at least a first additionalelement, the first additional element including at least one of Mo, Nband W in a first concentration such that the first intermediate layerhas a primary RuCo phase and a first eutectic phase having a firstdiffusion constant greater than a RuCo diffusion constant; a secondintermediate layer on the first intermediate layer, the secondintermediate layer including Ru and at least a second additional elementincluding at least one of Mo, Nb and W in a second concentration suchthat the second intermediate layer has a primary Ru phase and a secondeutectic phase having a second diffusion constant greater than a Rudiffusion constant; a third intermediate layer on the secondintermediate layer, the third intermediate layer including the Ru and atleast a third additional element including at least one of Mo, Nb and Win a third concentration such that the third intermediate layer has theprimary Ru phase and a third eutectic phase having a third diffusionconstant greater than the Ru diffusion constant; and a magneticrecording stack for storing magnetic data, the magnetic recording stackresiding on the third intermediate layer.
 13. A magnetic recording diskdrive comprising: a media including a substrate, at least oneintermediate layer on the substrate and a magnetic recording stack onthe at least one intermediate layer, the at least one intermediate layerwith a majority phase having a first diffusion constant and a secondaryphase having a second diffusion constant greater than the firstdiffusion constant, the at least one intermediate layer including afirst intermediate layer, a second intermediate layer and a thirdintermediate layer, the second intermediate layer being between thefirst intermediate layer and the third intermediate layer, each of thefirst intermediate layer, the second intermediate layer and the thirdintermediate layer including Ru, at least one of the second intermediatelayer and the third intermediate layer having the majority phase and thesecondary phase, the first intermediate layer including Ru and Co,wherein the first intermediate layer further includes at least one ofMo, Nb, W, Al, Be, C, Dy, Gd, Ge, Ho, Lu, Nd, Pd, Sm, Tb, Y or Zr; and aslider including a write transducer, the transducer having air-bearingsurface (ABS), a main pole and at least one coil, the main pole beingconfigured to write to a region of the media.
 14. A method for magneticrecording media usable in a magnetic storage device, the methodcomprising: providing at least one intermediate layer on a substrate,the at least one intermediate layer including a majority phase having afirst diffusion constant and a secondary phase having a second diffusionconstant greater than the first diffusion constant, a magnetic recordingstack residing on the intermediate layer, the step of providing the atleast one intermediate layer further including providing a firstintermediate layer including Ru and Co; providing a second intermediatelayer including Ru; and providing a third intermediate layer includingRu, the second intermediate layer being between the first intermediatelayer and the third intermediate layer, at least one of the secondintermediate layer and the third intermediate layer having the majorityphase and the secondary phase; and providing a magnetic recording stackon the at least one intermediate layer, the magnetic recording stack forstoring magnetic data, wherein the second intermediate layer issputtered at a first sputtering pressure and the third intermediatelayer is sputtered at a second sputtering pressure, the secondsputtering pressure being greater than the first sputtering pressure.15. The method of claim 14 wherein the secondary phase is a eutecticphase.
 16. The method of claim 14 wherein the majority phase has a firstcrystal structure, a first orientation, and a first composition, thesecondary phase being a precipitate having a second compositiondifferent from the first composition, the first orientation and thefirst crystal structure being substantially unchanged by a presence ofthe secondary phase.
 17. The method of claim 14 wherein the firstintermediate layer consists of Ru and Co.
 18. The method of claim 14wherein at least one of the second intermediate layer and the thirdintermediate layer includes an additional material selected from Mo, Nb,W, Al, Be, C, Dy, Gd, Ge, Ho, Lu, Nd, Pd, Sm, Tb, Y and Zr.
 19. Themethod of claim 14 further comprising: providing a soft underlayer onthe substrate; providing an orientation control layer on the softunderlayer, the orientation control layer being between the softunderlayer and the at least one intermediate layer.